D. Korytar et al., X-RAY MULTIPLE-BEAM ANALYSIS IN HIGH-RESOLUTION DIFFRACTOMETRY OF III-V HETEROSTRUCTURES, Journal of applied crystallography, 31, 1998, pp. 570-573
High-resolution X-ray diffractometry is used to measure such parameter
s of heteroepitaxic III-V layers as the substrate miscut angle alpha,
the relative lattice parameter perpendicular (Delta a(perpendicular to
)/a(s)) and parallel (Delta a(parallel to)/a(s)) to the interface, and
the epitaxic layer tilt angle beta. X-ray multiple simultaneous diffr
action is expected to provide more structural information and possibly
to simplify the analysis. In this paper, a coplanar multiple diffract
ion system using Co K alpha(1) radiation, a monolithic beam conditione
r, (004) and (115) simultaneous diffractions, and an oscillating slit
is analysed. It is concluded that with this method two measurements ar
e sufficient to obtain the values of (Delta a(perpendicular to)/a(s)),
(Delta a(parallel to)/a(s)), the layer tilt angle beta and the substr
ate miscut angle alpha. Moreover, the absolute value of the substrate
lattice parameter can be obtained.