TUNNELING TRANSPORT IN AL-N-GASB SCHOTTKY DIODES

Authors
SUBEKTI A TANSEY TL GOLDYS EM
Citation
A. Subekti et al., TUNNELING TRANSPORT IN AL-N-GASB SCHOTTKY DIODES, I.E.E.E. transactions on electron devices, 45(10), 1998, pp. 2247-2248
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
10
Year of publication
1998
Pages
2247 - 2248
Database
ISI
SICI code
0018-9383(1998)45:10<2247:TTIASD>2.0.ZU;2-E
Abstract
Investigations of AI Schottky contacts to n-GaSb are presented. Barrie r heights of 0.60 +/- 0.02 eV are found. Forward bias ideality factors between 2 at 300 K to 60 at 10 K, are explained by electron tunneling . Ideality factors yield donor concentrations significantly greater th an nominal, accentuated by annealing, suggesting modification of the r eactive GaSb surface.