RADIATIVE PROPERTIES OF SIMOX

Authors
RAVINDRA NM ABEDRABBO S GOKCE OH TONG FM PATEL A VELAGAPUDI R WILLIAMSON GD MASZARA WP
Citation
Nm. Ravindra et al., RADIATIVE PROPERTIES OF SIMOX, IEEE transactions on components, packaging, and manufacturing technology. Part A, 21(3), 1998, pp. 441-449
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Material Science
Journal title
IEEE transactions on components, packaging, and manufacturing technology. Part A → ACNP
ISSN journal
10709886
Volume
21
Issue
3
Year of publication
1998
Pages
441 - 449
Database
ISI
SICI code
1070-9886(1998)21:3<441:>2.0.ZU;2-F
Abstract
The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements h ave been performed in the temperature range of 17 to 800 degrees C and wavelength range of 0.8 to 20 mu m using a spectral emissometer, A mo deling approach based on Multi-Rad, a matrix method of representing mu lti-layers, has been adopted to interpret the experimental data. Opera ting ranges of wavelength for pyrometry have been suggested for a reli able monitoring of temperature for processing SIMOX wafers.