POST-CMP CLEANING USING ACOUSTIC STREAMING

Citation
Aa. Busnaina et Tm. Elsawy, POST-CMP CLEANING USING ACOUSTIC STREAMING, Journal of electronic materials, 27(10), 1998, pp. 1095-1098
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
ISSN journal
03615235
Volume
27
Issue
10
Year of publication
1998
Pages
1095 - 1098
Database
ISI
SICI code
0361-5235(1998)27:10<1095:PCUAS>2.0.ZU;2-D
Abstract
Noncontact surface cleaning is a desirable process in post-chemical me chanical polishing cleaning. High-frequency megasonic cleaning utilize s acoustic streaming as the dominant particle removal mechanism. It is widely used in the semiconductor industry for the removal of particul ate contamination. This paper introduces recent results that involve t he removal of silica slurry using megasonic cleaning. A noncontact (me gasonic) cleaning process for the removal of slurry residues from dipp ed and polished wafers is presented. Complete particle removal (100%) was achieved using megasonics with deionized water with 1% NH4OH using wafers dipped in silica slurry. The optimum conditions for megasonic cleaning (power, temperature, and time) were determined for the remova l of the silica slurry. Up to 99% particle removal from polished wafer s was accomplished using noncontact megasonic cleaning with 1% ammonia for 15 min.