SIMULATION OF LINEAR AND NONLINEAR ELECTRON-TRANSPORT IN HOMOGENEOUS SILICON INVERSION-LAYERS

A new formulation of the effective Schrodinger equation for a nonparab olic band structure is given. The electron phonon interaction is model ed taking into account the full phonon spectrum of the bulk model of J acoboni [Rev. mod. Phys. 55, 645 (1983)]. Scattering at ionized impuri ties and surface roughness is calculated including screening. Utilizin g the discrete subband structure and the nonparabolic energy dispersio n relation, transport is simulated taking into account Pauli's exclusi on principle. It is shown, that the number of subbands used for the ca lculation of transport has a strong impact on the resulting mobility. The simulated drift velocity is compared with experimental data and go od agreement is found for a wide range of temperature, doping concentr ation and bias conditions. The universal relationship between mobility and effective field found experimentally for ohmic transport[2] also holds in the case of nonequilibrium transport. The obtained saturation drift velocity is the same as in the bulk case and independent of the confining field.