AN EFFICIENT MONTE-CARLO DEVICE SIMULATION CODE BASED ON RIGOROUS APPLICATION OF INTERNAL SCATTERING

In Monte Carlo simulation of semiconductors[1,2] the most laborious pa rt is the calculation of the transition probabilities as function of s cattering angle and especially the inversion of these expressions. An obvious way to avoid this is to use look up tables. In many cases, how ever, this is not possible, e.g. because the parameters change during the simulation. For these cases we propose to use a technique called i nternal self-scattering which previously has been used only for carrie r-carrier scattering.