BACK-GATE INDUCED RANDOM TELEGRAPH SIGNAL-NOISE IN FULLY-DEPLETED SILICON-ON-INSULATOR NMOSFETS

Back-gate induced Random Telegraph Signal (RTS) noise in the front-cha nnel drain current is demonstrated for the first time experimentally, in fully-depleted Silicon-on-Insulator (SOI) nMOSFETs. The RTS is obse rved when the back-interface is in accumulation and is absent for zero , or positive back-gate bias. As will be demonstrated, hole-trapping a t the back-interface occurs, generating a low-frequency, large-amplitu de drain current step. This trapping is related to mobile charges in t he back-oxide, which therefore causes a metastable switching of the th reshold voltage.