ANALYSIS OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF SILICON BIPOLAR-TRANSISTORS FROM 77-K TO 400-K

Authors
ZHENG J HUANG LX CAO JC WU J WEI TL
Citation
J. Zheng et al., ANALYSIS OF THE EFFECTIVE DOPING DISTRIBUTION IN THE EMITTER OF SILICON BIPOLAR-TRANSISTORS FROM 77-K TO 400-K, Solid-state electronics, 36(11), 1993, pp. 1636-1638
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
36
Issue
11
Year of publication
1993
Pages
1636 - 1638
Database
ISI
SICI code
0038-1101(1993)36:11<1636:AOTEDD>2.0.ZU;2-X