INDUCED DAMAGES ON CMOS AND BIPOLAR INTEGRATED STRUCTURES UNDER FOCUSED ION-BEAM IRRADIATION

Focused ion beam used for failure analysis or repairing of ASICs degra des device performances by charging up the surface circuit. The influe nce of focused ion beam on device electrical performances has been stu died to understand the behavior of basic test integrated circuits. We have performed measurements on test structures : MOS capacitors and tr ansistors and bipolar transistors. Oxide trap filling and leakage curr ent through the structures induce different failure mechanisms such as : threshold voltage shift in MOS transistors, deep depletion state in MOS capacitors and current gain decrease in bipolar transistors. A cha racterization of these effects and a first interpretation are proposed . (C) 1998 Published by Elsevier Science Ltd. All rights reserved.