Ep. Vandamme et al., LOW-FREQUENCY NOISE-ANALYSIS AS A DIAGNOSTIC-TOOL TO ASSESS THE QUALITY OF 0.25-MU-M TI-SILICIDED POLY LINES, Microelectronics and reliability, 38(6-8), 1998, pp. 925-929
In this paper, de and low frequency noise measurement results on Ti-si
licided poly lines are presented and analysed. Besides Raman scatterin
g [1], low frequency noise analysis gives additional information on th
e presence and the spatial distribution of the high resistive C49 phas
e in the silicide line. The low frequency noise is strongly dependent
on whether or not the distribution of the C49 phase is uniform or spot
ted-like. The experimental results agree with our model for a uniform
C49 phase distribution over the silicided line. A spotted-like distrib
ution of the C49 phase, which causes non-uniform current densities, ca
n not explain the observed noise behaviour. (C) 1998 Elsevier Science
Ltd. All rights reserved.