CHARACTERIZATION OF SILC IN THIN OXIDES BY USING MOSFET SUBSTRATE CURRENT

Authors
DESALVO B GHIBAUDO G PANANAKAKIS G MONDON F
Citation
B. Desalvo et al., CHARACTERIZATION OF SILC IN THIN OXIDES BY USING MOSFET SUBSTRATE CURRENT, Microelectronics and reliability, 38(6-8), 1998, pp. 1075-1080
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1075 - 1080
Database
ISI
SICI code
0026-2714(1998)38:6-8<1075:COSITO>2.0.ZU;2-B
Abstract
A thorough SILC characterization by using MOSFET induced substrate cur rent is for the first time developed. Based on obtained results, it is argued that a model consisting in a electrode-limited conduction, as the Fowler-Nordheim emission, cannot explains thin-oxide SILC results, while a bulk-limited trap-assisted transport well fits experimental d ata. (C) 1998 Elsevier Science Ltd. All rights reserved.