HOT-CARRIER-INDUCED DEVICE DEGRADATION IN RF-NMOSFETS

Authors
PARK JT LEE BJ KIM DW YU CG YU HK
Citation
Jt. Park et al., HOT-CARRIER-INDUCED DEVICE DEGRADATION IN RF-NMOSFETS, Microelectronics and reliability, 38(6-8), 1998, pp. 1081-1084
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1081 - 1084
Database
ISI
SICI code
0026-2714(1998)38:6-8<1081:HDDIR>2.0.ZU;2-G
Abstract
This study presents the hot carrier induced device degradation in 0.8 mu m RF-nMOSFET's within the general framework of the degradation mech anism. It has been found that the device degradation model of a single -finger gate MOSFET could be applied for a multi-finger gate RF-nMOSFE T. The reduction of the cut-off frequency and maximum frequency after stress can be explained by the decrease of transconductance and the in crease of drain output conductance. (C) 1998 Elsevier Science Ltd. All rights reserved.