A. Martin et al., DEPENDENCE OF GATE OXIDE BREAKDOWN ON INITIAL CHARGE TRAPPING UNDER FOWLER-NORDHEIM INJECTION, Microelectronics and reliability, 38(6-8), 1998, pp. 1091-1096
This work demonstrates that for constant oxide reliability stresses in
the Fowler-Nordheim regime a low initial rate of charge trapping/detr
apping results in long times to breakdown. It was found for MOS gate o
xides that when the initial trapping has been completed at low fields
times to breakdown enhance. Depending on the stress sequence measureme
nt results can vary significantly which is of great relevance for corr
ect oxide lifetime predictions. (C) 1998 Elsevier Science Ltd. All rig
hts reserved.