A NEW HOT-CARRIER DEGRADATION LAW FOR MOSFET LIFETIME PREDICTION

We propose in this paper a new hot carrier degradation law for a relia ble MOSFET lifetime prediction. We show that the proposed exponential function carl describe all kind of curve concavity (saturating or non- saturating shapes) and can fit very well with the experimental data fo r the whole duration of the stress. Finally, it gives a more accurate lifetime value as compared to-previous modelings because it accounts f or the concavity of the saturating degradation law. (C) 1998 Elsevier Science Ltd. All rights reserved.