ELECTRICAL PARAMETERS DEGRADATION LAW OF MOSFET DURING AGING

A new method to extract the different electrical parameters lifetime o f MOS transistors submitted to hot carriers degradation is proposed. T his method leads to error on the lifetime below 15%, even if the param eter variation measurement reaches only 8%. The robustness of this met hod has been tested for various biases of stress and different technol ogies representative of different ageing mechanisms. Finally this meth od is a good indicator of the degradation modes occurring during the s tress. (C) 1998 Elsevier Science Ltd. All rights reserved.