DESIGN OF A LOW EMI SUSCEPTIBILITY CMOS TRANSIMPEDANCE OPERATIONAL-AMPLIFIER

Authors
SETTI G SPECIALE N
Citation
G. Setti et N. Speciale, DESIGN OF A LOW EMI SUSCEPTIBILITY CMOS TRANSIMPEDANCE OPERATIONAL-AMPLIFIER, Microelectronics and reliability, 38(6-8), 1998, pp. 1143-1148
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1143 - 1148
Database
ISI
SICI code
0026-2714(1998)38:6-8<1143:DOALES>2.0.ZU;2-W
Abstract
In this work we analyze the effects of electromagnetic-induced interfe rences conveyed at the input of a transimpedance CMOS operational ampl ifier. In particular, it will be highlighted that transimpedance ampli fiers natural exhibit a lower EMI susceptibility compared to common vo ltage-feedback opamps. Moreover, it will be shown through simulations that a careful circuit design can lead to opamps with a practically va nishing EMI susceptibility. (C) 1998 Elsevier Science Ltd. All rights reserved.