STRAIN DEPENDING RELIABILITY OF AUTOMOTIVE DIODES

Citation
L. Galateanu et al., STRAIN DEPENDING RELIABILITY OF AUTOMOTIVE DIODES, Microelectronics and reliability, 38(6-8), 1998, pp. 1331-1334
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1331 - 1334
Database
ISI
SICI code
0026-2714(1998)38:6-8<1331:SDROAD>2.0.ZU;2-2
Abstract
After improving the assembly system, the remaining automotive diodes f ailures, above 4% in operation, was associated to the internal strain, based on the RVT test results. The X-ray diffraction spectra the rock ing curves - allowed the pointing out of the internal strain induced b y the grinding and diffusion processes. New conditions for the diffusi on process, which reduce the induced strain on the B-AI diffused side, were established. An important improvement of the automotive diodes r eliability was obtained, the failure percentages diminishing by a fact or between 4 and 8, in operation and in RVT tests. (C) 1998 Elsevier S cience Ltd. All rights reserved.