ON THE EFFECT OF POWER CYCLING STRESS ON IGBT MODULES

Authors
Citation
P. Cova et F. Fantini, ON THE EFFECT OF POWER CYCLING STRESS ON IGBT MODULES, Microelectronics and reliability, 38(6-8), 1998, pp. 1347-1352
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1347 - 1352
Database
ISI
SICI code
0026-2714(1998)38:6-8<1347:OTEOPC>2.0.ZU;2-O
Abstract
IGBT reliability is becoming of great relevance, due to the range of a pplication of these devices. Nevertheless, no standard test methods ha ve been established, in order to evaluate their power cycling reliabil ity. On this paper we report on the effect of Delta T and T-jmax on th e power cycling capability of IGBT dice, by means of a matrix of stres s cycles with different values of Delta T and T-jmax. Failure analysis has been performed, in order to understand the failure mechanisms ind uced by the stress. (C) 1998 Elsevier Science Ltd. All rights reserved .