Xa. Cao et al., PASSIVATION OF THE GAAS(100) SURFACE WITH A VAPOR-DEPOSITED GAS FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2656-2659
A vapor-deposited GaS passivating layer is formed on GaAs(100) with al
pha-Ga2S3 powder used as a single-source precursor for the deposition.
The films grown show near-single-crystal quality, and are characteriz
ed by Auger electron spectroscopy and x-ray diffraction spectroscopy.
The band-edge discontinuities of the GaS/GaAs heterojunction are deter
mined to be 1.9 eV for the valence band and 0.3 eV for the conduction
band, respectively, by ultraviolet photoelectron spectroscopy and elec
tron-energy-loss spectroscopy. It is also observed that the valence-ba
nd structure of the GaS overlayer becomes much sharper after annealing
. (C) 1998 American Vacuum Society. [S0734-211X(98)04205-X].