THERMAL-DECOMPOSITION OF BULK AND HETEROEPITAXIAL (100)INP SURFACES -A COMBINED IN-SITU SCANNING ELECTRON-MICROSCOPY AND MASS-SPECTROMETRIC STUDY

Authors
RIESZ F DOBOS L KARANYI J
Citation
F. Riesz et al., THERMAL-DECOMPOSITION OF BULK AND HETEROEPITAXIAL (100)INP SURFACES -A COMBINED IN-SITU SCANNING ELECTRON-MICROSCOPY AND MASS-SPECTROMETRIC STUDY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2672-2674
Citations number
15
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
5
Year of publication
1998
Pages
2672 - 2674
Database
ISI
SICI code
1071-1023(1998)16:5<2672:TOBAH(>2.0.ZU;2-D
Abstract
The thermal decomposition of bulk and heteroepitaxial (100) InP surfac es is studied by in situ scanning electron microscopy combined with ma ss spectrometry. The onset of P evaporation coincides with the In drop let nucleation at about 480 degrees C and the major evaporation of pho sphorous commences above 510 degrees C and corresponds to the serious deterioration of the surface. There is no significant difference betwe en bulk and defected (heteroepitaxial InP/GaAs) samples. The relevance to InP technology is discussed. (C) 1998 American Vacuum Society.