PROPERTIES AND RELIABILITY OF ULTRATHIN OXIDES GROWN ON 4-INCH DIAMETER SILICON-WAFERS BY MICROWAVE PLASMA AFTERGLOW OXIDATION

Authors
CHEN CR HU SF CHEN PC HWANG HL HSIA LC
Citation
Cr. Chen et al., PROPERTIES AND RELIABILITY OF ULTRATHIN OXIDES GROWN ON 4-INCH DIAMETER SILICON-WAFERS BY MICROWAVE PLASMA AFTERGLOW OXIDATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2712-2719
Citations number
24
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
16
Issue
5
Year of publication
1998
Pages
2712 - 2719
Database
ISI
SICI code
1071-1023(1998)16:5<2712:PAROUO>2.0.ZU;2-4
Abstract
We have successfully grown ultrathin oxides on large area of silicon w afers by the microwave plasma afterglow oxidation method. Analysis of the Fourier transform infrared spectra indicates that the general bond ing structures of the ultrathin oxides grown by microwave plasma after glow oxidation at 700 degrees C could be identical to those grown by d ry O-2 thermal oxidation. Electrical property measurements (e.g., time -zero dielectric breakdown and time-dependent dielectric breakdown) ar e also investigated. Based on our results, we conclude that microwave plasma afterglow oxidation is a useful method for the preparation of l arge area ultrathin oxide films on silicon substrates. (C) 1998 Americ an Vacuum Society.