POSITIVE SAMPLE BIAS EFFECT IN SCANNING TUNNELING MICROSCOPE IMAGING OF LOW-COVERAGE ALKALI-METAL ATOMS ON SI(111)7X7 SURFACE

Citation
J. Eitle et al., POSITIVE SAMPLE BIAS EFFECT IN SCANNING TUNNELING MICROSCOPE IMAGING OF LOW-COVERAGE ALKALI-METAL ATOMS ON SI(111)7X7 SURFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2894-2897
Citations number
11
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
5
Year of publication
1998
Pages
2894 - 2897
Database
ISI
SICI code
1071-1023(1998)16:5<2894:PSBEIS>2.0.ZU;2-6
Abstract
Already at coverages as low as 0.005 monolayer of potassium on room te mperature Si(111)7x7 surfaces, atomic resolution is gradually lost whe n imaging the surface with scanning tunneling microscope at positive s ample bias, giving rise to bright triangles over the faulted halves of the 7x7 unit cells and dark triangles above the unfaulted halves. We suggest that this is due to potassium atoms that are picked up by the tip from K islands at the surface, as is evident by the observed lower ing of the tunneling energy barrier. This phenomenon vanishes upon the rmal desorption of K islands or upon exposure to 0.1 L oxygen. (C) 199 8 American Vacuum Society.