COMBINED METHOD OF FOCUSED ION-BEAM MILLING AND ION-IMPLANTATION TECHNIQUES FOR THE FABRICATION OF HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS

Citation
Ch. Chen et al., COMBINED METHOD OF FOCUSED ION-BEAM MILLING AND ION-IMPLANTATION TECHNIQUES FOR THE FABRICATION OF HIGH-TEMPERATURE SUPERCONDUCTOR JOSEPHSON-JUNCTIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2898-2901
Citations number
12
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
5
Year of publication
1998
Pages
2898 - 2901
Database
ISI
SICI code
1071-1023(1998)16:5<2898:CMOFIM>2.0.ZU;2-Z
Abstract
We have studied the T-c degradation of epitaxial YB2Cu3O7-x (YBCO) fil ms on (100) LaAlO3 substrates implanted with 100 keV O+ ions at differ ent conditions. The influence of Au mask thickness and the implantatio n doses on the film characteristics have been investigated systematica lly. YBCO bridges have been modified by local oxygen ion implantation at optimal condition through a narrow trench in an Au/photoresist mask , which was fabricated formed by focused ion beam milling and reactive ion etching. The critical current and normal resistance of the modifi ed bridges were found to be characteristic of superconductor/normal/su perconductor Josephson junction behavior. Microwave irradiation of the junctions resulted in Shapiro steps in the I-V characteristics. (C) 1 998 American Vacuum Society.