REFLOW OF COPPER IN AN OXYGEN AMBIENT

Citation
Sy. Lee et al., REFLOW OF COPPER IN AN OXYGEN AMBIENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2902-2905
Citations number
20
Categorie Soggetti
Physics, Applied","Engineering, Eletrical & Electronic
ISSN journal
10711023
Volume
16
Issue
5
Year of publication
1998
Pages
2902 - 2905
Database
ISI
SICI code
1071-1023(1998)16:5<2902:ROCIAO>2.0.ZU;2-E
Abstract
In order to investigate the reflow characteristics of copper, copper w as deposited on hole and trench patterns by metal organic chemical vap or deposition and it was annealed in nitrogen and oxygen ambients with the annealing temperatures ranging from 350 to 550 degrees C. Upon an nealing in an oxygen ambient at higher than 450 degrees C, copper was reflowed into the trench patterns whose linewidth and aspect ratio wer e 0.2 mu m and 4:1, respectively. Copper oxide was found with a thickn ess of less than a fifth of the total film thickness. The resistivity of the copper film increased when reflow occurred. It is thought that the reflow of copper in an oxygen ambient takes place because of enhan ced surface diffusion. (C) 1998 American Vacuum Society.