Sy. Lee et al., REFLOW OF COPPER IN AN OXYGEN AMBIENT, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2902-2905
In order to investigate the reflow characteristics of copper, copper w
as deposited on hole and trench patterns by metal organic chemical vap
or deposition and it was annealed in nitrogen and oxygen ambients with
the annealing temperatures ranging from 350 to 550 degrees C. Upon an
nealing in an oxygen ambient at higher than 450 degrees C, copper was
reflowed into the trench patterns whose linewidth and aspect ratio wer
e 0.2 mu m and 4:1, respectively. Copper oxide was found with a thickn
ess of less than a fifth of the total film thickness. The resistivity
of the copper film increased when reflow occurred. It is thought that
the reflow of copper in an oxygen ambient takes place because of enhan
ced surface diffusion. (C) 1998 American Vacuum Society.