MONTE-CARLO SIMULATION OF SURFACE KINETICS DURING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF SIO2 USING OXYGEN TETRAETHOXYSILANE CHEMISTRY

Tetraethoxysilane/oxygen (TEOS/O2) chemistries are now used for low pl asma enhanced chemical vapor deposition (PECVD) Of SiO2 when high conf ormality and low temperature are required. The surface processes leadi ng to film growth, carbon elimination, and conformality are not well c haracterized. We have developed a model to investigate the surface kin etics of the PECVD of SiO2 films using TEOS/O2 chemistry. The model in cludes precursor adsorption and desorption, densification of the film, void formation, pyrolysis, plasma surface interactions, and geometric shadowing. Results for growth rate, fraction of carbon retained in th e film, film conformality, and film roughness are discussed.