EXCIMER-LASER REACTIVE ABLATION - AN EFFICIENT APPROACH FOR THE DEPOSITION OF HIGH-QUALITY TIN FILMS

The successful deposition of TiN films on Si wafers by excimer (lambda =308 nm) multipulse laser ablation of Ti in a low pressure N2 jet is r eported in this article. The films are particularly pure, entirely con sisting of polycrystalline fcc TiN. One difficulty still seems to be r elated to the presence of small droplets probably ejected in a liquid phase. According to the analyses, TiN is formed on Ti target with smal l contributions only, if any, of the next transit through gas and fina l deposition onto the Si wafer support.