IN-SITU OBSERVATION OF GROWING SURFACE OF OXIDE-FILMS BY REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION BEAM EXCITED AUGER-ELECTRON SPECTROSCOPY

The reflection high-energy electron diffraction beam excited Auger ele ctron spectroscopy (AES) was applied to in situ and real time observat ion of the growing surface of films during molecular-beam epitaxy depo sition. A compact electron energy analyzer assembly which consists of an einzel lens, sector-type energy analyzer, microchannel plate detect or, and magnetic shielding case was built to enable the measurement cl ose to the substrate without disturbing the deposition. The system was checked by the in situ AES measurement of crystals surface during cle aning with ozone. The technique is applicable to analyze in situ the g rowing surface of more complicated materials such as oxide superconduc tors whose microstructures at an atomic level must be well controlled for better quality and for use in microelectronic devices such as the Josephson junction.