AN ANALYTICAL SUBTHRESHOLD CURRENT MODEL FOR GAAS-MESFETS

An analytical GaAs MESFET model capable of describing the current in t he subthreshold region was derived. The model is based on the drift-di ffusion transport mechanism, together with the drain-induced barrier l owering (DIBL) effect, which is prevailing particularly in a short cha nnel device. From this model the subthreshold currents for long channe l as well as short channel and the subthreshold swings in two cases ar e developed. Good agreement between the calculated and experimental re sults can also be achieved. This model offers a basis for analysis and simulation of small-geometry GaAs MESFET behavior in the subthreshold region. (C) 1998 Elsevier Science Ltd.