ANALYTICAL SUBTHRESHOLD CURRENT HUMP MODEL FOR DEEP-SUBMICRON SHALLOW-TRENCH-ISOLATED CMOS DEVICES

Authors
LIN SC KUO JB HUANG KT SUN SW
Citation
Sc. Lin et al., ANALYTICAL SUBTHRESHOLD CURRENT HUMP MODEL FOR DEEP-SUBMICRON SHALLOW-TRENCH-ISOLATED CMOS DEVICES, Solid-state electronics, 42(10), 1998, pp. 1871-1879
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
42
Issue
10
Year of publication
1998
Pages
1871 - 1879
Database
ISI
SICI code
0038-1101(1998)42:10<1871:ASCHMF>2.0.ZU;2-V
Abstract
This paper reports an analytical subthreshold current hump model for d eep-submicron shallow-trench-isolated CMOS devices. As verified by the experimental data, this subthreshold current hump model can provide a prediction of the back gate bias related subthreshold current hump ph enomenon. According to the analytical model, with a more heavily doped substrate, the current hump phenomenon occurs at a more negative back gate bias. (C) 1998 Elsevier Science Ltd. All rights reserved.