TECHNOLOGY CHALLENGES AND SOLUTIONS FOR 1GBIT AND BEYOND

Authors
MAZURE C ALSMEIER J DEHM C HONLEIN W
Citation
C. Mazure et al., TECHNOLOGY CHALLENGES AND SOLUTIONS FOR 1GBIT AND BEYOND, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 15-25
Citations number
11
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
15 - 25
Database
ISI
SICI code
1058-4587(1998)21:1-4<15:TCASF1>2.0.ZU;2-Y
Abstract
The need for higher DRAM densities, for cost effective manufacturing a nd the price pressure puts the DRAM development on a highly innovative path. The fast pace with which DRAM cell sizes are reduced results in many technology issues. This talk discusses the deep trench cell arch itecture, its advantages and the main technology innovations that have made the aggressive scaling of the DRAM cell possible. The issues rel ated to Gbit DRAMs, the new challenges and potential innovations will be presented.