ELECTRICAL CHARACTERIZATION OF FERROELECTRIC, PARAELECTRIC, AND SUPERPARAELECTRIC THIN-FILMS

Authors
WASER R LOHSE O
Citation
R. Waser et O. Lohse, ELECTRICAL CHARACTERIZATION OF FERROELECTRIC, PARAELECTRIC, AND SUPERPARAELECTRIC THIN-FILMS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 27-40
Citations number
37
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
27 - 40
Database
ISI
SICI code
1058-4587(1998)21:1-4<27:ECOFPA>2.0.ZU;2-W
Abstract
Detailed equivalent circuit models of ferroelectric and high-permittiv ity dielectric capacitors are required for the development of FeRAM an d ultra-dense DRAM devices. This review comprises the frequency depend ence of C-V and P-V characteristics, grain size effects, electrode int erface effects, as well as reversible and irreversible contributions t o the ferroelectric polarization and discusses their impact on the equ ivalent circuit modeling.