ELECTRICAL-PROPERTIES OF PZT THIN-FILMS GROWN ON IR IRO2 BOTTOM ELECTRODES BY MOCVD/

Authors
FUJISAWA H HYODO S JITSUI K SHIMIZU M NIU H OKINO H SHIOSAKI T
Citation
H. Fujisawa et al., ELECTRICAL-PROPERTIES OF PZT THIN-FILMS GROWN ON IR IRO2 BOTTOM ELECTRODES BY MOCVD/, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 107-114
Citations number
6
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
107 - 114
Database
ISI
SICI code
1058-4587(1998)21:1-4<107:EOPTGO>2.0.ZU;2-U
Abstract
Electrical properties of Ir/IrO2/PZT/Ir/IrO2 and IrO2/IrPZT/Ir/IrO2 ca pacitors were investigated. SIMS analysis showed that the Ir/IrO2 bott om electrode acted as a good barrier layer of the interdiffusion. Ir/I rO2/PZT/Ir/IrO2 capacitors did not show good electrical properties due to plasma damage during top electrode sputtering. On the other hand, IrO2/Ir/PZT/Ir/IrO2 capacitors showed no fatigue up to 10(9) cycles, w hen annealing after top electrode deposition was performed. Electrical properties of IrO2/Ir/PZT/Ir/IrO2 capacitors were dependent on the th ickness of Ir/IrO2 bottom electrode. These experimental results sugges ted that electrical properties of PZT capacitors were influenced by th e interdiffusion at the bottom interface and the plasma damage at the upper interface.