MODELING OF METAL-FERROELECTRIC-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

The characteristics for a MFS FET (metal-ferroelectric-semiconductor f ield effect transistor) is very different than a conventional MOSFET a nd must be modeled differently. The drain current has a hysteresis sha pe with respect to the gate voltage. The position along the hysteresis curve is dependent on the last positive or negative polling of the fe rroelectric material, The drain current also has a logarithmic decay a fter the last polling. A model has been developed to describe the MFSF ET drain current for both gate voltage on and gate voltage off conditi ons. This model takes into account the hysteresis nature of the MFSFET and the time dependent decay. The model is based on the shape of the Fermi-Dirac function which has been modified to describe the MFSFET's drain current. This is different from the model proposed by Chen et. a l.([1]) and that by Wu([2]).