THE INTEGRATION OF BA0.5SR0.5TIO3 WITH SILICON BY THE USE OF METALLICBUFFERS

Authors
ZHUANG WW WU NJ RITUMS D IGNATIEV A
Citation
Ww. Zhuang et al., THE INTEGRATION OF BA0.5SR0.5TIO3 WITH SILICON BY THE USE OF METALLICBUFFERS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 167-172
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
167 - 172
Database
ISI
SICI code
1058-4587(1998)21:1-4<167:TIOBWS>2.0.ZU;2-5
Abstract
Ba0.5Sr0.5TiO3 (BST) thin films have been deposited by pulsed laser de position on metallic alloy conducting electrodes integrated onto a TiN /p-Si(100) wafer. The dielectric properties of these stacks have been studied, and other properties, including surface morphology and interf ace, have also been explored.