ECR-MOCVD OF THE BA-SR-TI-O SYSTEM BELOW 400-DEGREES-C - PART I - PROCESSING

SrTiO3 (or ST) and (Ba, Sr)TiO3 (or BST) thin films were deposited on Pt passivated Si substrates below 400 degrees C, using beta-diketonate s of Ba, Sr, and Ti, electron cyclotron resonance (ECR) plasma-enhance d chemical vapor deposition (CVD), and direct liquid injection system. Reported here are results from various thin-film characterization tec hniques including TEM and SEM. To optimize the processing parameters w ith respect to phase purity, Sr/Ti ratio, and permittivity, the method of design of experiments was implemented. The as-deposited (at 390 de grees C), unannealed ST films exhibited a permittivity of 120 and an o hmic contact with the bottom Pt electrode. The former was attributed t o the small grain size (150-200 Angstrom) and presence of Sr rich seco nd phases. The latter was related to the observed incubation period at the initial nucleation stages of film growth.