PREPARATION OF FERROELECTRIC YMNO3 THIN-FILMS FOR NONVOLATILE MEMORY DEVICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
SHIN WC CHOI KJ YANG CH PARK JB YOON SG
Citation
Wc. Shin et al., PREPARATION OF FERROELECTRIC YMNO3 THIN-FILMS FOR NONVOLATILE MEMORY DEVICES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 319-329
Citations number
14
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
319 - 329
Database
ISI
SICI code
1058-4587(1998)21:1-4<319:POFYTF>2.0.ZU;2-L
Abstract
Ferroelectric YMnO3 thin films were successfully prepared on Si(111) a nd Pt/Ti/SiO2/Si substrates using a hot-wall type metalorganic chemica l vapor deposition. When Y/Mn ratio was 0.98, the remanent polarizatio n, P-r, and the coercive field, E-c, of YMnO3 films deposited Pt/Ti/Si O2/Si were 2.6 mu C/cm(2) and 36.1 kV/cm at an applied voltage of 5V, respectively. The dielectric constant and the dissipation factor at 1M Hz were about 16.6 and 0.046, respectively. The leakage current densit y of the 360 nm thick YMnO3 film was 4.7 x 10(-6) A/cm(2) at 40 kV/cm.