GROWTH OF BISMUTH TITANATE FILMS BY CHEMICAL-VAPOR-DEPOSITION AND CHEMICAL SOLUTION DEPOSITION

Bismuth titanate, Bi4Ti3O12 (BIT) was grown via chemical vapor deposit ion (CVD) and chemical solution deposition(CSD). The BIT films were gr own by CVD, with triphenylbismuth and titanium isopropoxide. BIT films were fabricated by CSD using a solution prepared with bismuth ethylhe xanoate and titanium butoxyethoxide dissolved in butoxyethanol. What i s readily apparent in both CVD and CSD BIT films, is that composition plays a dominant role in determining not only phase purity but texturi ng as well and that a small composition variation can lead to dramatic changes in phase purity, orientation and electrical properties. In th e CVD BIT films composition was controlled by changing the growth temp erature. In the CSD BIT films composition was controlled by changing t he solution composition. CVD BIT films crystallized at lower temperatu res with better crystallinity and greater c-axis texturing than the CS D BIT films at comparable Bi/Ti composition. For both CVD and CSD, tit anium rich films contained a mixture of randomly oriented BIT and pyro chlore with generally lower remanent polarization values. For both the CVD and CSD films, c-axis texturing was observed to increase with inc reasing bismuth content. Bismuth rich films were typically strongly c- axis textured with generally lower remanent polarization values. The h ighest remanent polarization was obtained for stoichiometric randomly oriented CSD films.