DIELECTRIC-PROPERTIES OF SRTIO3, AND BST THIN-FILMS FABRICATED USING ECR-PEMOCVD

Authors
LEE JS KIM KS KIM E NO K
Citation
Js. Lee et al., DIELECTRIC-PROPERTIES OF SRTIO3, AND BST THIN-FILMS FABRICATED USING ECR-PEMOCVD, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 343-353
Citations number
15
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
343 - 353
Database
ISI
SICI code
1058-4587(1998)21:1-4<343:DOSABT>2.0.ZU;2-S
Abstract
The SrTiO3 Thin films were deposited on Pt/SiO2/Si by ECR-PEMOCVD and their dielectric properties were investigated as a function of composi tion. The chemical bonding states of elements consisting these films w ere investigated using X-ray photoelectron spectroscopy (XPS) and Disc rete Variational (DV)X alpha simulation. The asymmetry of composition dependence on dielectric properties was explained by the XPS data. Fur ther, effectiveness of NH3 carrier gas over Ar to deposit SrTiO3 is di scussed in detail. Based on these data, the thickness dependence of di electric constant of BST films was explained.