DESIGN AND APPLICATION OF MULTIWAFER MOCVD SYSTEMS FOR FERROELECTRICS

Citation
M. Deschler et al., DESIGN AND APPLICATION OF MULTIWAFER MOCVD SYSTEMS FOR FERROELECTRICS, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 381-384
Citations number
7
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
381 - 384
Database
ISI
SICI code
1058-4587(1998)21:1-4<381:DAAOMM>2.0.ZU;2-9
Abstract
Metalorganic chemical vapor deposition (MOCVD) has been established as the most favoured method for the processing of (Ba,Sr)TiO3, Pb(Zr,Ti) O-3 and SrBi2Ta2O9 thin films. Due to good step coverage, uniformity o f thickness and composition as well as throughput MOCVD will certainly be the choice for the mass production of future electroceramic thin f ilm based devices such as volatile and non-volatile memories, electroo ptic devices, microactuators and sensors. Since many groups showed in a laboratory scale that electroceramic thin films deposited by MOCVD t echniques are suitable for future applications in terms of electrical and mechanical properties, the need for production worthy tools is rap idly increasing. In this paper we present a large scale manufactor too l (capacity up to 4 x 300 mm) which meets all demands for an automized mass production of electroceramic thin films.