ORIENTED CONDUCTIVE OXIDE ELECTRODES ON SIO2 SI/

Highly conductive biaxially textured (both normal to and in the film p lane) RuO2 and La0.5Sr0.5CoO3 thin films have been deposited on SiO2/S i substrates for the first time. Yttria-stabilized zirconia (YSZ) prod uced by ion-beam-assisted-deposition (IBAD) is used as a seed layer to induce the biaxial texture of RuO2 and/or La0.5Sr0.5CoO3 on amorphous SiO2/Si. The degree of in-plane texture of the conductive oxide films is directly related to the texture of IBAD-YSZ. The biaxially oriente d RuO2 and La0.5Sr0.5CoO3 films have a metallic resistivity vs tempera ture characteristic and a room-temperature resistivity of 37 mu Omega- cm and 110 mu Omega-cm, respectively. Ba0.5Sr0.5TiO3 thin films deposi ted on SiO2/Si using biaxially oriented RuO2 and La0.5Sr0.5CoO3 as bot tom electrodes are(111) and (110) oriented, respectively.