THE ELECTRICAL-PROPERTIES OF BA1-X SRXTIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION

Authors
WILLS LA SCHMITZ T REYES T AMANO J
Citation
La. Wills et al., THE ELECTRICAL-PROPERTIES OF BA1-X SRXTIO3 THIN-FILMS GROWN BY SPUTTER-DEPOSITION, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 429-440
Citations number
10
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
429 - 440
Database
ISI
SICI code
1058-4587(1998)21:1-4<429:TEOBST>2.0.ZU;2-P
Abstract
Ba1-xSrxTiO3 (BST) thin films were deposited by reactive rf-magnetron sputtering onto Si substrates. The influence of the deposition paramet ers such as temperature and oxygen ambient on the dielectric constant of the films is presented. BST films deposited at 450 degrees C and op timum conditions exhibited a dielectric constant of approximately 200 at frequencies as high as 1GHz. In addition, the films were found to h ave leakage current densities of <0.1 mu Amp/cm(2) at fields of 5x10(5 )V/cm. An extrapolated lifetime greater than 10 years was obtained fro m stress tests at elevated temperatures and fields. These films compar ed favorably with published data.