BASIC SPUTTERING PROCESS AND FERROELECTRIC PROPERTIES OF SINGLE-DOMAIN SINGLE-CRYSTAL THIN-FILMS OF PBTIO3

Single c-domain single crystal PbTiO3 (PT) thin films were prepared by sputtering on both miscut (001)SrTiO3 (ST) and (110)SrRuO3/miscut (00 1)ST substrates with a miscut angle of 1.7 degrees. Film thickness ran ged from 5 nm to 250 nm. The film growth was governed by step-flow gro wth and the film surface was atomically flat. The lattice misfit strai n induced during the film growth was quenched. The PT films were tetra gonally deformed and tightly bonded to the ST. The PT films showed no anomaly on the curves of lattice parameter in terms of temperature (te mperature range, room temp. to 600 degrees C), due to their excellent interfacial quality, although anomalies are expected at the Curie temp erature (around 490 degrees C in bulk PT). The P/E loops suggest that the saturation polarization P-s was 40 mu C/cm(2) with a high coercive field of 400 to 500 kV/cm and a dielectric constant of 60 to 70 at 1 KHz. The P-s of the PT thin film is about half that of bulk PT.