LOW-TEMPERATURE PREPARATION OF FERROELECTRIC SRBI2TA2O9 THIN-FILMS BYA MODIFIED RF-MAGNETRON SPUTTERING TECHNIQUE

Authors
YANG CH KIM JS YOON SG
Citation
Ch. Yang et al., LOW-TEMPERATURE PREPARATION OF FERROELECTRIC SRBI2TA2O9 THIN-FILMS BYA MODIFIED RF-MAGNETRON SPUTTERING TECHNIQUE, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 475-483
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
Journal title
Integrated ferroelectrics (Print) → ACNP
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
475 - 483
Database
ISI
SICI code
1058-4587(1998)21:1-4<475:LPOFST>2.0.ZU;2-E
Abstract
Bi-layered ferroelectric SrBi2Ta2O9 (SBT) films were successfully prep ared on Pt/Ti/SiO2/Si substrates at 650 degrees C by a modified rf mag netron sputtering technique. The SET films annealed for 1 h in O-2 (76 0 torr) and again for 30 min in O-2 (5 torr) at 650 degrees C show a a verage grain size of about 49 nm The SET films annealed at 65 0 degree s C have a remanent polarization (P-r) of 6.0 mu C/cm(2) and coercive field (E-c) of 36 kV/cm at an excitation voltage of 5 V, The films sho wed fatigue-free characteristics up to 4.0 x 10(10) switching cycles u nder 5 V bipolar pulse. The retention characteristics of SET films loo ked very promosing up to 1.0 x 10(5) s.