EPITAXIAL THIN-FILM HETEROSTRUCTURES OF RELAXOR FERROELECTRIC PB(MG1 3NB2/3)O-3-PBTIO3/

Citation
D. Lavric et al., EPITAXIAL THIN-FILM HETEROSTRUCTURES OF RELAXOR FERROELECTRIC PB(MG1 3NB2/3)O-3-PBTIO3/, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 499-509
Citations number
17
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10584587
Volume
21
Issue
1-4
Year of publication
1998
Pages
499 - 509
Database
ISI
SICI code
1058-4587(1998)21:1-4<499:ETHORF>2.0.ZU;2-M
Abstract
We have grown stoichiometric pure perovskite phase Pb(Mg1/3Nb2/3)O-3- PbTiO3 (PMN-PT) thin films and PMN-PT/SrRuO3 heterostructures on miscu t (100) SrTiO3 substrates by pulsed laser deposition. X-ray diffractio n theta-2 theta scans show that the PMN-PT films are purely c-axis ori ented. The off-axis phi scans show that the heterostructures grow ''cu be-on-cube'' with an in-plane epitaxial arrangement of PMN-PT[100],[01 0] // SrRuO3[001] // SrTiO3[100] and PMN-PT[010],[100] // SrRuO3[(1) o ver bar 10] // SrTiO3[010]. The crystalline quality of the films found to be comparable to that of bulk single crystals. The AFM images show that the SrRuO3 and PMN-PT layers have smooth surfaces with root mean square roughness of 9 Angstrom. These epitaxial heterostructures can be used for the fabrication of piezoelectric devices.