MODELING OF A THIN-FILM PYROELECTRIC PIXEL - TRANSIENT RESULTS

Citation
G. Teowee et Dr. Uhlmann, MODELING OF A THIN-FILM PYROELECTRIC PIXEL - TRANSIENT RESULTS, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 941-949
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
941 - 949
Database
ISI
SICI code
1058-4587(1998)22:1-4<941:MOATPP>2.0.ZU;2-A
Abstract
Pyroelectric thin films are receiving increasing attention for the nex t generation of integrated room temperature uncooled IR arrays. Pixel size and NETD (net equivalent temperature difference) of 50 mu m and 0 .005 K are projected respectively. In this study, the 1-D transient re sponse of a pixel consisting of black absorber, pyroelectric, Pt, TiO2 , SiO2 and Si are performed. Thermal conduction and radiative transfer are assumed to take place across this stack and at the Si substrate-a ir interface, respectively. The effects of individual film thickness, IR chopping frequency, thermal conductivity of the thermal barrier lay er and substrate thickness on the pyroelectric response are investigat ed.