PYROELECTRIC PROPERTIES OF SOL-GEL DERIVED PZT THIN-FILMS WITH VARIOUS ZR TI RATIOS/

Citation
G. Teowee et al., PYROELECTRIC PROPERTIES OF SOL-GEL DERIVED PZT THIN-FILMS WITH VARIOUS ZR TI RATIOS/, Integrated ferroelectrics (Print), 22(1-4), 1998, pp. 951-958
Citations number
9
Categorie Soggetti
Physics, Condensed Matter","Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10584587
Volume
22
Issue
1-4
Year of publication
1998
Pages
951 - 958
Database
ISI
SICI code
1058-4587(1998)22:1-4<951:PPOSDP>2.0.ZU;2-2
Abstract
Integrated pyroelectric arrays are receiving serious attention for the next generation of room temperature uncooled IR cameras. Such pyroele ctric arrays are based on monolithic ferroelectric(FE) thin films. FE films with large values of reported pyroelectric coefficients include PbTiO3, Ca-doped PbTiO3, La-doped PbTiO3, PZT 53/47 and Pb(Sc0.5Ta0.5) O-3 The present paper reports a systematic study of the compositional dependence of PZT thin films on their pyroelectric properties. A serie s of sol-gel derived PZT (lead zirconate titanate) thin films with var ious Zr/Ti ratios, namely, PbTiO3, PZT 20/80, PZT 35/65, PZT 53/47, PZ T 65/35, PZT 92/8 and PbZrO3, were prepared on platinized Si substrate s. The films were fired to 650 - 700 degrees C to crystallize them int o single-phase perovskite. The degree of preferred orientation, grain size and firing temperature affect the pyroelectric responses. Pyroele ctric coefficients as large as 2.5 x 10(-8) C/cm(2)-K were obtained, m aking such PZT thin films attractive in pyroelectric arrays.