EFFECT OF SUBSTRATES ON EPITAXY OF BI4TI3O12 THIN-FILMS BY DIPPING-PYROLYSIS PROCESS

Bismuth titanate (Bi4Ti3O12) thin films have been prepared on various substrates by the dipping-pyrolysis process using metal naphthenates a s starting materials. The crystallinity and in-plane alignment of the films are analysed by X-ray diffraction theta-2 theta scans and beta s cans (polar diagrams), respectively. Highly c-axis-oriented Bi4Ti3O12 thin films with smooth surfaces are obtained by heat treatment at 750 degrees C on SrTiO3 (100), LaAlO3 (100) and MgO (100) substrates, whil e films grown on Si (100) exhibit polycrystalline characteristics. The fluctuation of in-plane alignment of epitaxially grown films depends on the lattice-misfit values between the films and the substrates used ; Bi4Ti3O12 films on MgO shows the largest full width at half maximum values in their beta scans. (C) 1998 Elsevier Science S.A. All rights reserved.