HOT-ELECTRON AND DX CENTER INSENSITIVITY OF AL0.25GA0.75AS GAAS HFETSDESIGNED FOR MICROWAVE-POWER APPLICATIONS/

Authors
MENOZZI R PAVESI M MANFREDI M GHEZZI C LANZIERI C PERONI M CANALI C
Citation
R. Menozzi et al., HOT-ELECTRON AND DX CENTER INSENSITIVITY OF AL0.25GA0.75AS GAAS HFETSDESIGNED FOR MICROWAVE-POWER APPLICATIONS/, I.E.E.E. transactions on electron devices, 45(11), 1998, pp. 2261-2267
Citations number
26
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
45
Issue
11
Year of publication
1998
Pages
2261 - 2267
Database
ISI
SICI code
0018-9383(1998)45:11<2261:HADCIO>2.0.ZU;2-J
Abstract
We show in this work that, although designing AlxGa1-xAs/GaAs HFET's f or microwave power applications requires a large barrier layer bandgap (hence x > 0.2), the presence of a large concentration of electricall y active DX centers in the barrier layer does not hinder the device re liability. The existence of a remarkable quantity of DM centers in the Al0.25Ga0.75As barrier layer is for the first time revealed by means of room temperature electroluminescence, and their concentration is ev aluated by measuring the threshold voltage shift induced by hot electr on stress at cryogenic temperatures.