A NEW COBALT SALICIDE TECHNOLOGY FOR 0.15-MU-M CMOS DEVICES

A new cobalt (Co) salicide technology for subquarter micron CMOS trans istors has been developed using high-temperature sputtering and in sit u vacuum annealing. Sheet resistance of 11 Ohm/square for both gate el ectrode and diffusion layer was obtained with 5-nm-thick Co film. No l ine width dependence of sheet resistance was observed down to 0.15-mu m-wide gate electrode and 0.33-mu m-wide diffusion layer. The high tem perature sputtering process led to the growth of epitaxial CoSi2 layer s with high thermal stability. By using this technology 0.15 mu m CMOS devices which have shallow junctions were successfully fabricated.