ON THE PROPERTIES OF THE GATE AND SUBSTRATE CURRENT AFTER SOFT BREAKDOWN IN ULTRATHIN OXIDE LAYERS

In this work we have studied soft breakdown (SED) in capacitors and nM OSFET's with 4.5-nm oxide thickness. It is shown that for larger area devices gate current and substrate current as a function of the gate v oltage after SED are stable and unique curves, but for smaller area de ,ices both currents become lower and unstable. This difference can be explained by the different energy available for discharging in the SBD path. It is shown that the SBD detection strongly depends on the test structure area. In nMOSFET's for positive gate polarity, the large in crease in the substrate current at the SBD moment is proposed as a sen sitive SBD detector. Two level fluctuations in the gate current are in vestigated at different voltages and are explained by means of a model where electron capture-emission in the traps of the SBD path induces local field fluctuations causing variations in the tunneling rate acro ss the oxide. In the substrate current directly correlated two-level f luctuations are observed.